Resonant transmission in the base/collector junction of a bipolar quantum-well resonant-tunneling transistor

A new transistor effect is demonstrated in a 120 nm base, bipolar quantum-well, resonanttunneling transistor (BiQuaRTT) . In this BiQuaRTT, a strong, multiple negative differential resistance (NDR) characteristic is obtained at room temperature with highcurrent gain ( > 50). The effect is shown to be the consequence of an asymmetric, quantumwell-base heterostructure whose shape is controlled by the base/collector bias. Changes in the quantum-well shape lead to large modulations of the transmission coefficient for quasithermalized minority electrons crossing the quantum-well base. In this letter, we describe the transport characteristics of these transistors, including also temperature and magnetic field dependence.