Resonant transmission in the base/collector junction of a bipolar quantum-well resonant-tunneling transistor

نویسندگان

  • A. C. Seabaugh
  • M. A. Reed
چکیده

A new transistor effect is demonstrated in a 120 nm base, bipolar quantum-well, resonanttunneling transistor (BiQuaRTT) . In this BiQuaRTT, a strong, multiple negative differential resistance (NDR) characteristic is obtained at room temperature with highcurrent gain ( > 50). The effect is shown to be the consequence of an asymmetric, quantumwell-base heterostructure whose shape is controlled by the base/collector bias. Changes in the quantum-well shape lead to large modulations of the transmission coefficient for quasithermalized minority electrons crossing the quantum-well base. In this letter, we describe the transport characteristics of these transistors, including also temperature and magnetic field dependence.

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تاریخ انتشار 1999